검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide Yazdanfar M, Pedersen H, Sukkaew P, Ivanov IG, Danielsson O, Kordina O, Janzen E Journal of Crystal Growth, 390, 24, 2014 |
| 2 |
Process stability and morphology optimization of very thick 4H-SiC epitaxial layers grown by chloride-based CVD Yazdanfar M, Stenberg P, Booker ID, Ivanov IG, Kordina O, Pedersen H, Janzen E Journal of Crystal Growth, 380, 55, 2013 |
| 3 |
Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications Pedersen H, Leone S, Kordina O, Henry A, Nishizawa S, Koshka Y, Janzen E Chemical Reviews, 112(4), 2434, 2012 |
| 4 |
Growth of smooth 4H-SiC epilayers on 4 degrees off-axis substrates with chloride-based CVD at very high growth rate Leone S, Beyer FC, Pedersen H, Kordina O, Henry A, Janzen E Materials Research Bulletin, 46(8), 1272, 2011 |
| 5 |
Chlorinated precursor study in low temperature chemical vapor deposition of 4H-SiC Leone S, Beyer FC, Pedersen H, Andersson S, Kordina O, Henry A, Janzen E Thin Solid Films, 519(10), 3074, 2011 |
| 6 |
Optimization of a Concentrated Chloride-Based CVD Process for 4H-SiC Epilayers Leone S, Henry A, Andersson S, Kordina O, Janzen E Journal of the Electrochemical Society, 157(10), H969, 2010 |
| 7 |
Improved morphology for epitaxial growth on 4 degrees off-axis 4H-SiC substrates Leone S, Pedersen H, Henry A, Kordina O, Janzen E Journal of Crystal Growth, 311(12), 3265, 2009 |
| 8 |
Thick homoepitaxial layers grown on on-axis Si-face 6H-and 4H-SiC substrates with HCl addition Leone S, Pedersen H, Henry A, Kordina O, Janzen E Journal of Crystal Growth, 312(1), 24, 2009 |
| 9 |
Bulk growth of 6H-SiC on non-basal quasi-polar faces Shishkin Y, Kordina O Journal of Crystal Growth, 291(2), 317, 2006 |
| 10 |
High growth rates (> 30 mu m/h) of 4H-SiC epitaxial layers using a horizontal hot-wall CVD reactor Myers RL, Shishkin Y, Kordina O, Saddow SE Journal of Crystal Growth, 285(4), 486, 2005 |