검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition Jia X, Wei JJ, Huang YB, Shao SW, An K, Kong YC, Liu JL, Chen LX, Li CM Journal of Materials Science, 56(11), 6903, 2021 |
| 2 |
An investigation on tribological properties of the chemically capped zinc borate(ZB)/MoS2 nanocomposites in oil Wu PR, Feng YM, Ge T, Kong YC, Ma ZS, Liu Z, Cheng ZL Journal of Industrial and Engineering Chemistry, 63, 157, 2018 |
| 3 |
Improvement of RF performance for AlGaN/GaN HEMT by using a cavity structure Wang W, Yu XX, Zhou JJ, Chen DJ, Zhang K, Kong C, Lu HY, Kong YC, Li ZH, Chen TS Solid-State Electronics, 126, 32, 2016 |
| 4 |
Long-term reliability of the thermal performance of a flat-plate heat pipe using a prognostics method Kim HJ, Lee SH, Kong YC, Jang SP, Choi JH, Koo J International Journal of Heat and Mass Transfer, 82, 369, 2015 |
| 5 |
One-step electrodeposition process to fabricate cathodic superhydrophobic surface Chen Z, Li F, Hao LM, Chen AQ, Kong YC Applied Surface Science, 258(4), 1395, 2011 |
| 6 |
Function of quantum-confinement effect in the AlGaN/AlN/GaN heterostructure with an AlN interfacial layer Kong YC, Chu RM, Zheng YD, Zhou CH, Gu SL, Zhang R, Han P, Shi Y, Jiang RL Journal of Vacuum Science & Technology B, 25(3), 873, 2007 |
| 7 |
Study on strain and piezoelectric polarization of AlN thin films grown on Si Deng YZ, Kong YC, Zheng YD, Zhou CH, Xi DJ, Chen P, Gu SL, Shen B, Zhang R, Han P, Jiang R, Shi Y Journal of Vacuum Science & Technology A, 23(4), 628, 2005 |
| 8 |
A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density Kong YC, Zheng YD, Zhou CH, Deng YZ, Shen B, Gu SL, Zhang R, Han P, Jiang RL, Shi Y Solid-State Electronics, 49(2), 199, 2005 |