검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
The effect of pollutants on leakage current and power degradation of photovoltaic modules Wang P, Kong MY, Du W, Wang LH, Ni L Renewable Energy, 146, 2668, 2020 |
| 2 |
Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy Gao F, Huang DD, Li JP, Kong MY, Sun DZ, Li JM, Zeng YP, Lin LY Journal of Crystal Growth, 223(4), 489, 2001 |
| 3 |
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure Cao X, Zeng YP, Cui LJ, Kong MY, Pan LA, Wang BQ, Zhu ZP Journal of Crystal Growth, 227, 127, 2001 |
| 4 |
High-quality metamorphic HEMT grown on GaAs substrates by MBE Zeng YP, Cao X, Cui LJ, Kong MY, Pan L, Wang BQ, Zhu ZP Journal of Crystal Growth, 227, 210, 2001 |
| 5 |
Hydrogen behavior in GaN epilayers grown by NH3-MBE Kong MY, Zhang JP, Wang XL, Sun DZ Journal of Crystal Growth, 227, 371, 2001 |
| 6 |
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability Gao F, Lin YX, Huang DD, Li JP, Sun DZ, Kong MY, Zeng YP, Li JM, Lin LY Journal of Crystal Growth, 227, 766, 2001 |
| 7 |
Changing the size and shape of Ge island by chemical etching Gao F, Huang CJ, Huang DD, Li JP, Sun DZ, Kong MY, Zeng YP, Li JM, Lin LY Journal of Crystal Growth, 231(1-2), 17, 2001 |
| 8 |
Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer Cao X, Zeng YP, Kong MY, Pan LA, Wang BQ, Zhu ZP, Wang XG, Chang Y, Chu JH Journal of Crystal Growth, 231(4), 520, 2001 |
| 9 |
The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices Cao X, Zeng YP, Kong MY, Pan L, Wang BQ, Zhu ZP Solid-State Electronics, 45(5), 751, 2001 |
| 10 |
Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy Liu JP, Huang DD, Li JP, Lin YX, Sun DZ, Kong MY Journal of Crystal Growth, 208(1-4), 322, 2000 |