검색결과 : 1건
No. | Article |
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1 |
A new mobility model to explain the transconductance overshoot effect observed in ultra-short-channel length MOSFETs Kolhatkar JS, Dutta AK Solid-State Electronics, 44(4), 691, 2000 |
No. | Article |
---|---|
1 |
A new mobility model to explain the transconductance overshoot effect observed in ultra-short-channel length MOSFETs Kolhatkar JS, Dutta AK Solid-State Electronics, 44(4), 691, 2000 |