화학공학소재연구정보센터
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No. Article
1 Crystal orientation of monoclinic beta-Ga2O3 thin films formed on cubic MgO substrates with a gamma-Ga2O3 interfacial layer
Nakagomi S, Kokubun Y
Journal of Crystal Growth, 479, 67, 2017
2 The orientational relationship between monoclinic beta-Ga2O3 and cubic NiO
Nakagomi S, Kubo S, Kokubun Y
Journal of Crystal Growth, 445, 73, 2016
3 NiO films grown epitaxially on MgO substrates by sol-gel method
Kokubun Y, Amano Y, Meguro Y, Nakagomi S
Thin Solid Films, 601, 76, 2016
4 Crystal orientation of beta-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate
Nakagomi S, Kokubun Y
Journal of Crystal Growth, 349(1), 12, 2012
5 Substrate bias amplification of a SiC junction field effect transistor with a catalytic gate electrode
Nakagomi S, Takahashi M, Kokubun Y, Uneus L, Savage S, Wingbrant H, Andersson M, Lundstrom I, Lofdahl M, Spetz AL
Materials Science Forum, 457-460, 1507, 2004
6 Preparation of phosphorous dope beta-irondisilicide thin films and application for devices
Ehara T, Nakagomi S, Kokubun Y
Solid-State Electronics, 47(2), 353, 2003
7 beta-FeSi2-base MIS diodes fabricated by sputtering method
Ehara T, Sasaki Y, Saito K, Nakagomi S, Kokubun Y
Applied Surface Science, 175, 96, 2001