검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth technique Kambayashi H, Satoh Y, Kokawa T, Ikeda N, Nomura T, Kato S Solid-State Electronics, 56(1), 163, 2011 |
| 2 |
Over 100 A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage Kambayashi H, Satoh Y, Ootomo S, Kokawa T, Nomura T, Kato S, Chow TSP Solid-State Electronics, 54(6), 660, 2010 |
| 3 |
Liquid-phase sensors using open-gate AlGaN/GaN high electron mobility transistor structure Kokawa T, Sato T, Hasegawa H, Hashizume T Journal of Vacuum Science & Technology B, 24(4), 1972, 2006 |