| 1 |
Selected papers from the 7th IEEE International Nanoelectronics Conference (INEC 2016) and the 5th International Symposium on Next-Generation Electronics (ISNE 2016)
Kok CW, Tam WS
Solid-State Electronics, 138, 1, 2017 |
| 2 |
Silicon oxynitride prepared by chemical vapor deposition as optical waveguide materials
Wong CK, Wong H, Kok CW, Chan M
Journal of Crystal Growth, 288(1), 171, 2006 |
| 3 |
Electrical characteristics of high-kappa grown by direct sputtering dielectric film method
Sen B, Sarkar CK, Wong H, Chan M, Kok CW
Solid-State Electronics, 50(2), 237, 2006 |
| 4 |
Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride
Choi HY, Wong H, Filip V, Sen B, Kok CW, Chan M, Poon MC
Thin Solid Films, 504(1-2), 7, 2006 |
| 5 |
Current transport and high-field reliability of aluminum/hafnium oxide/silicon structure
Sen B, Wong H, Filip V, Choi HY, Sarkar CK, Chan M, Kok CW, Poon MC
Thin Solid Films, 504(1-2), 312, 2006 |
| 6 |
Interface bonding structure of hafniurn oxide prepared by direct sputtering of hafnium in oxygen
Wong H, Ng KL, Zhan N, Poon MC, Kok CW
Journal of Vacuum Science & Technology B, 22(3), 1092, 2004 |
| 7 |
Bonding structures of silicon oxynitride prepared by oxidation of Si-rich silicon nitride
Poon MC, Kok CW, Wong H, Chan PJ
Thin Solid Films, 462-63, 42, 2004 |
| 8 |
Interface and oxide traps in high-kappa hafnium oxide films
Wong H, Zhan N, Ng KL, Poon MC, Kok CW
Thin Solid Films, 462-63, 96, 2004 |
| 9 |
XPS study of the thermal instability of HfO2 prepared by Hf sputtering in oxygen with RTA
Zhan N, Poon MC, Kok CW, Ng KL, Wong H
Journal of the Electrochemical Society, 150(10), F200, 2003 |
