검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation Alexewicz A, Alomari M, Maier D, Behmenburg H, Giesen C, Heuken M, Pogany D, Kohn E, Strasser G Solid-State Electronics, 89, 207, 2013 |
| 2 |
Surface structure and electrochemical characteristics of boron-doped diamond exposed to rf N-2-plasma Denisenko A, Romanyuk A, Kibler LA, Kohn E Journal of Electroanalytical Chemistry, 657(1-2), 164, 2011 |
| 3 |
Lateral Depletion of Contact to Metallic Nanoparticles on Boron-Doped Diamond Electrodes Denisenko A, Pietzka C, Kibler LA, Kohn E Journal of the Electrochemical Society, 157(3), H342, 2010 |
| 4 |
Concepts for diamond electronics Kohn E, Denisenko A Thin Solid Films, 515(10), 4333, 2007 |
| 5 |
MOVPE growth of GaN on Si(111) substrates Dadgar A, Poschenrieder M, Blasing J, Contreras O, Bertram F, Riemann T, Reiher A, Kunze M, Daumiller I, Krtschil A, Diez A, Kaluza A, Modlich A, Kamp M, Christen J, Ponce FA, Kohn E, Krost A Journal of Crystal Growth, 248, 556, 2003 |
| 6 |
Prospects of bipolar diamond devices Aleksov A, Denisenko A, Kohn E Solid-State Electronics, 44(2), 369, 2000 |
| 7 |
Carrier mobilities in modulation doped Si1-xGex heterostructures with respect to FET applications Hock G, Gluck M, Hackbarth T, Herzog HJ, Kohn E Thin Solid Films, 336(1-2), 141, 1998 |