검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Indium as a p-type dopant of thin film silicon solar cells Paez DJ, Huante-Ceron E, Knights AP Thin Solid Films, 615, 358, 2016 |
| 2 |
Thermal evolution of defects produced by implantation of H, D and He in Silicon Simpson PJ, Knights AP, Chicoine M, Dudeck K, Moutanabbir O, Ruffell S, Schiettekatte F, Terreault B Applied Surface Science, 255(1), 63, 2008 |
| 3 |
Modification of silicon waveguide structures using ion implantation induced defects Knights AP, Dudeck KJ, Walters WD, Coleman PG Applied Surface Science, 255(1), 75, 2008 |
| 4 |
Silicon-on-insulator waveguide photodetector with self-ion-implantation-engineered-enhanced infrared response Knights AP, Bradley JDB, Gou SH, Jessop PE Journal of Vacuum Science & Technology A, 24(3), 783, 2006 |
| 5 |
Sensitivity of positron annihilation spectroscopy to energy contamination in low energy boron ion implantation Knights AP, Coleman PG Materials Science Forum, 445-6, 123, 2004 |
| 6 |
The role of impurities in the formation of voids in silicon Simpson PJ, Knights AP Materials Science Forum, 445-6, 180, 2004 |
| 7 |
Room-temperature evolution of vacancy-type damage created by 2 keV B+ implantation of Si Gwilliam RM, Knights AP, Burrows CP, Coleman PG Journal of Vacuum Science & Technology B, 20(1), 427, 2002 |
| 8 |
Effect of residual damage on carrier transport properties in a 4H-SiC double implanted bipolar junction transistor Ortolland S, Wright NG, Johnson CM, Knights AP, Coleman PG, Burrows CP, Pidduck AJ Materials Science Forum, 353-356, 567, 2001 |
| 9 |
Double implanted power MESFET technology in 4H-SiC Horsfall AB, Ortolland S, Wright NG, Johnson CM, Knights AP Materials Science Forum, 353-356, 707, 2001 |
| 10 |
Defect physics investigations using positron and ion beams Simpson PJ, Szpala S, Knights AP Materials Science Forum, 363-3, 56, 2001 |