| 1 |
Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts
Farokhnejad A, Schwarz M, Horst F, Iniguez B, Lime F, Kloes A
Solid-State Electronics, 159, 191, 2019 |
| 2 |
Advanced analytical modeling of double-gate Tunnel-FETs - A performance evaluation
Graef M, Hosenfeld F, Horst F, Farokhnejad A, Hain F, Iniguez B, Kloes A
Solid-State Electronics, 141, 31, 2018 |
| 3 |
Charge based, continuous compact model for the channel current in organic thin-film transistors for all regions of operation
Hain F, Graef M, Iniguez B, Kloes A
Solid-State Electronics, 133, 17, 2017 |
| 4 |
A quantum wave based compact modeling approach for the current in ultra-short DG MOSFETs suitable for rapid multi-scale simulations
Hosenfeld F, Horst F, Iniguez B, Lime F, Kloes A
Solid-State Electronics, 137, 70, 2017 |
| 5 |
3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs, including simple treatment of quantization effects
Holtij T, Kloes A, Iniguez B
Solid-State Electronics, 112, 85, 2015 |
| 6 |
2D physics-based closed-form modeling of dopant-segregated Schottky barrier UTB MOSFETs
Schwarz M, Kloes A
Solid-State Electronics, 99, 65, 2014 |
| 7 |
Compact modeling solutions for short-channel SOI Schottky barrier MOSFETs
Schwarz M, Holtij T, Kloes A, Iniguez B
Solid-State Electronics, 82, 86, 2013 |
| 8 |
Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region
Holtij T, Schwarz M, Kloes A, Iniguez B
Solid-State Electronics, 90, 107, 2013 |
| 9 |
Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs
Schwarz M, Holtij T, Kloes A, Iniguez B
Solid-State Electronics, 69, 72, 2012 |
| 10 |
2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current
Schwarz M, Holtij T, Kloes A, Iniguez B
Solid-State Electronics, 63(1), 119, 2011 |
