검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Majority traps observed in H+- or He+-implanted Al-doped 6H-SiC by admittance and deep level transient spectroscopy Reshanov SA, Klettke O, Pensl G Materials Science Forum, 433-4, 379, 2002 |
| 2 |
Electrical characterization of erbium-implanted 4H-SiC epilayers Reshanov SA, Klettke O, Pensl G, Choyke WJ Materials Science Forum, 433-4, 459, 2002 |
| 3 |
Oxygen-related defect centers observed in 4H/6H-SiC epitaxial layers grown under CO(2) ambient Klettke O, Pensl G, Kimoto T, Matsunami H Materials Science Forum, 353-356, 459, 2001 |
| 4 |
Formation of precipitates in 6H-SiC after oxygen implantation and subsequent annealing Pecz B, Klettke O, Pensl G, Stoemenos J Materials Science Forum, 338-3, 961, 2000 |