검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Spatially resolved analysis of dopant concentration in axial GaAs NW pn-contacts Nagelein A, Timm C, Schwarzburg K, Steidl M, Kleinschmidt P, Hannappel T Solar Energy Materials and Solar Cells, 197, 13, 2019 |
| 2 |
Double-layer stepped Si(100) surfaces prepared in As-rich CVD ambience Paszuk A, Supplie O, Nandy M, Bruckner S, Dobrich A, Kleinschmidt P, Kim B, Nakano Y, Sugiyama M, Hannappel T Applied Surface Science, 462, 1002, 2018 |
| 3 |
GaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparation Paszuk A, Supplie O, Kim B, Bruckner S, Nandy M, Heinisch A, Kleinschmidt P, Nakano Y, Sugiyama M, Hannappel T Solar Energy Materials and Solar Cells, 180, 343, 2018 |
| 4 |
Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy Zhao W, Steidl M, Paszuk A, Bruckner S, Dobrich A, Supplie O, Kleinschmidt P, Hannappel T Applied Surface Science, 392, 1043, 2017 |
| 5 |
In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient Paszuk A, Dobrich A, Koppka C, Bruckner S, Duda M, Kleinschmidt P, Supplie O, Hannappel T Journal of Crystal Growth, 464, 14, 2017 |
| 6 |
Surface preparation of Si(100) by thermal oxide removal in a chemical vapor environment Doscher H, Bruckner S, Dobrich A, Hohn C, Kleinschmidt P, Hannappel T Journal of Crystal Growth, 315(1), 10, 2011 |
| 7 |
Atomic surface structure of Si(100) substrates prepared in a chemical vapor environment Doscher H, Kleinschmidt P, Hannappel T Applied Surface Science, 257(2), 574, 2010 |