검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Ab initio calculations and rate equation simulations for vacancy and vacancy-oxygen clustering in silicon Kissinger G, Dabrowski J, Sinno T, Yang Y, Kot D, Sattler A Journal of Crystal Growth, 468, 424, 2017 |
| 2 |
Modeling the Early Stages of Oxygen Agglomeration Kissinger G, Dabrowski J, Kot D, Akhmetov V, Sattler A, von Ammon W Journal of the Electrochemical Society, 158(4), H343, 2011 |
| 3 |
Oxide precipitation via coherent seed-oxide phases Kissinger G, Dabrowski J Journal of the Electrochemical Society, 155(6), H448, 2008 |
| 4 |
Analytical modeling of the interaction of vacancies and oxygen for oxide precipitation in RTA treated silicon wafers Kissinger G, Dabrowski J, Sattler A, Seuring C, Muller T, Richter H, von Ammon W Journal of the Electrochemical Society, 154(6), H454, 2007 |
| 5 |
Life cycle of grown-in defects in silicon as observed by IR-LST Kissinger G, Vanhellemont J Journal of Crystal Growth, 210(1-3), 7, 2000 |
| 6 |
Assessment of silicon wafer material for the fabrication of integrated circuit sensors Muller T, Kissinger G, Benkitsch AC, Brand O, Baltes H Journal of the Electrochemical Society, 147(4), 1604, 2000 |
| 7 |
Grown-in oxide precipitate nuclei in Czochralski silicon substrates and their role in device processing Kissinger G, Grabolla T, Morgenstern G, Richter H, Graf D, Vanhellemont J, Lambert U, von Ammon W Journal of the Electrochemical Society, 146(5), 1971, 1999 |
| 8 |
Influence of residual point defect supersaturation on the formation of grown-in oxide precipitate nuclei in CZ-Si Kissinger G, Vanhellemont J, Lambert U, Graf D, Dornberger E, Richter H Journal of the Electrochemical Society, 145(5), L75, 1998 |
| 9 |
Method for Studying the Grown-in Defect Density Spectra in Czochralski Silicon-Wafers Kissinger G, Graf D, Lambert U, Richter H Journal of the Electrochemical Society, 144(4), 1447, 1997 |