화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Characteristics of 6H-SiC bipolar JTE diodes realized by sublimation epitaxy and Al implantation
Strel'chuk AM, Lebedev AA, Davydov DV, Savkina NS, Kuznetsov AN, Valakh MY, Kiselev VS, Romanyuk BN, Raynaud C, Chante JP, Locatelli ML
Materials Science Forum, 457-460, 1133, 2004
2 Some aspects of sublimation growth of SiC ingots
Avramenko SF, Kiselev VS, Valakh MY, Yukhimchuk VA
Materials Science Forum, 353-356, 41, 2001