검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Single contact-material MESFETs on 4H-SiC Tanimoto S, Inada M, Kiritani N, Hoshi M, Okushi H, Arai K Materials Science Forum, 457-460, 1221, 2004 |
| 2 |
Fabrication of double implanted (0001) 4H-SiC MOSFETs by using pyrogenic re-oxidation annealing Kosugi R, Kiritani N, Suzuki K, Yatsuo T, Adachi K, Fukuda K Materials Science Forum, 457-460, 1397, 2004 |
| 3 |
Ohmic contact structure and fabrication process applicable to practical SiC devices Tanimoto S, Kiritani N, Hoshi M, Okushi H Materials Science Forum, 389-3, 879, 2002 |
| 4 |
4H-SiC ACCUFET with a two-layer stacked gate oxide Kaneko S, Tanaka H, Shimoida Y, Kiritani N, Tanimoto S, Yamanaka M, Hoshi M Materials Science Forum, 389-3, 1073, 2002 |
| 5 |
Fabrication of 4H-SiC planar MESFETs having low contact resistance Na HJ, Kim HJ, Adachi K, Kiritani N, Tanimoto S, Okushi H, Arai K Materials Science Forum, 389-3, 1383, 2002 |
| 6 |
Single material ohmic contacts simultaneously formed on the source/p-well/gate of 4H-SiC vertical MOSFETs Kiritani N, Hoshi M, Tanimoto S, Adachi K, Nishizawa S, Yatsuo T, Okushi H, Arai K Materials Science Forum, 433-4, 669, 2002 |
| 7 |
Gate oxide with high dielectric breakdown strength after undergoing a typical power MOSFET fabrication process Tanimoto S, Kiritani N, Hoshi M, Okushi H, Arai K Materials Science Forum, 433-4, 725, 2002 |