화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Feature scale model of Si etching in SF6/O-2/HBr plasma and comparison with experiments
Belen RJ, Gomez S, Kiehlbauch M, Aydil ES
Journal of Vacuum Science & Technology A, 24(2), 350, 2006
2 In situ measurement of the ion incidence angle dependence of the ion-enhanced etching yield in plasma reactors
Belen RJ, Gomez S, Kiehlbauch M, Aydil ES
Journal of Vacuum Science & Technology A, 24(6), 2176, 2006
3 Feature-scale model of Si etching in SF6 plasma and comparison with experiments
Belen RJ, Gomez S, Kiehlbauch M, Cooperberg D, Aydil ES
Journal of Vacuum Science & Technology A, 23(1), 99, 2005
4 Feature-scale model of Si etching in SF6/O-2 plasma and comparison with experiments
Belen RJ, Gomez S, Cooperberg D, Kiehlbauch M, Aydil ES
Journal of Vacuum Science & Technology A, 23(5), 1430, 2005
5 Etching of high aspect ratio features in Si using SF6/O-2/HBr and SF6/O-2/Cl-2 plasma
Gomez S, Belen RJ, Kiehlbauch M, Aydil ES
Journal of Vacuum Science & Technology A, 23(6), 1592, 2005
6 Etching of high aspect ratio structures in Si using SF6/O-2 plasma
Gomez S, Belen RJ, Kiehlbauch M, Aydil ES
Journal of Vacuum Science & Technology A, 22(3), 606, 2004