화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 On the anisotropic wafer curvature of GaN-based heterostructures on Si(110) substrates grown by MOVPE
Mauder C, Booker ID, Fahle D, Boukiour H, Behmenburg H, Khoshroo LR, Woitok JF, Vescan A, Heuken M, Kalisch H, Jansen RH
Journal of Crystal Growth, 315(1), 220, 2011
2 Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates
Mauder C, Reuters B, Khoshroo LR, Rzheutskii MV, Lutsenko EV, Yablonskii GP, Woitok JF, Heuken M, Kalisch H, Jansen RH
Journal of Crystal Growth, 312(11), 1823, 2010
3 Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates
Mauder C, Khoshroo LR, Behmenburg H, Wen TC, Dikme Y, Rzheutskii MV, Yablonskii GP, Woitok J, Chou MMC, Heuken M, Kalisch H, Jansen RH
Journal of Crystal Growth, 310(23), 4976, 2008