화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Optimization of InAs/GaSb type-II superlattice interfaces for long-wave (similar to 8 mu m) infrared detection
Khoshakhlagh A, Plis E, Myers S, Sharma YD, Dawson LR, Krishna S
Journal of Crystal Growth, 311(7), 1901, 2009
2 Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge/Si1-xGex/Si substrates with Al2O3 gate dielectric
Shahrjerdi D, Nuntawong N, Balakrishnan G, Garcia-Gutierrez DI, Khoshakhlagh A, Tutuc E, Huffaker D, Lee JC, Banerjee SK
Journal of Vacuum Science & Technology B, 26(3), 1182, 2008
3 Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III-V semiconductor materials
Jallipalli A, Balakrishnan G, Huang SH, Khoshakhlagh A, Dawson LR, Huffaker DL
Journal of Crystal Growth, 303(2), 449, 2007
4 High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layer
Balakrishnan G, Huang S, Khoshakhlagh A, Dawson LR, Xin YC, Conlin P, Huffaker DL
Journal of Vacuum Science & Technology B, 23(3), 1010, 2005