검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Interface characteristics of ZrO2 high-k gate dielectrics on epitaxial Ge capacitor layers after thermal desorption of Ge native oxide and Ge nitridation Oh J, Majhi P, Tseng HH, Jammy R, Kelly DQ, Banedee SK, Campbell JC Thin Solid Films, 516(12), 4107, 2008 |
| 2 |
Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (similar to 80 nm) Si1-xGex step-graded buffer layers for high-kappa III-V metal-oxide-semiconductor field effect transistor applications Oye MM, Shahrjerdi D, Ok I, Hurst JB, Lewis SD, Dey S, Kelly DQ, Joshi S, Mattord TJ, Yu X, Wistey MA, Harris JS, Holmes AL, Lee JC, Banerjee SK Journal of Vacuum Science & Technology B, 25(3), 1098, 2007 |