검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Study of GaN doping with carbon from propane in a wide range of MOVPE conditions Lundin WV, Sakharov AV, Zavarin EE, Kazantsev DY, Ber BY, Yagovkina MA, Brunkov PN, Tsatsulnikov AF Journal of Crystal Growth, 449, 108, 2016 |
| 2 |
Diffusion of zinc in gallium arsenide with the participation isovalent impurities Karlina LB, Vlasov AS, Ber BY, Kazantsev DY Journal of Crystal Growth, 432, 133, 2015 |
| 3 |
High growth rate MOVPE of Al(Ga)N in planetary reactor Lundin WV, Nikolaev AE, Yagovkina MA, Brunkov PN, Rozhavskaya MM, Ber BY, Kazantsev DY, Tsatsulnikov AF, Lobanova AV, Talalaev RA Journal of Crystal Growth, 352(1), 209, 2012 |
| 4 |
Determination of nitrogen in silicon carbide by secondary ion mass spectrometry Ber BY, Kazantsev DY, Kovarsky AP, Yafaev RR Applied Surface Science, 203, 184, 2003 |
| 5 |
Direct determination of p/n junction depth by the emission of matrix complex ions Alexandrov OV, Kazantsev DY, Kovarsky AP Applied Surface Science, 203, 520, 2003 |