검색결과 : 24건
| No. | Article |
|---|---|
| 1 |
GaN/NbN epitaxial semiconductor/superconductor heterostructures Yan RS, Khalsa G, Vishwanath S, An YH, Wright J, Ouvimov SR, Katzer DS, Nepal N, Downey BP, Muller DA, Xing HG, Meyer DJ, Jena D Nature, 555(7695), 183, 2018 |
| 2 |
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates Storm DF, Hardy MT, Katzer DS, Nepal N, Downey BP, Meyer DJ, McConkie TO, Zhou L, Smith DJ Journal of Crystal Growth, 456, 121, 2016 |
| 3 |
Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN Storm DF, McConkie T, Katzer DS, Downey BP, Hardy MT, Meyer DJ, Smith DJ Journal of Crystal Growth, 409, 14, 2015 |
| 4 |
Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates Hardy MT, Storm DF, Nepal N, Katzer DS, Downey BP, Meyer DJ Journal of Crystal Growth, 425, 119, 2015 |
| 5 |
Effect of SiNx gate insulator thickness on electrical properties of SiNx/In0.17Al0.83N/AlN/GaN MIS-HEMTs Downey BP, Meyer DJ, Katzer DS, Marron TM, Pan M, Gao X Solid-State Electronics, 106, 12, 2015 |
| 6 |
Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates Storm DF, Deen DA, Katzer DS, Meyer DJ, Binari SC, Gougousi T, Paskova T, Preble EA, Evans KR, Smith DJ Journal of Crystal Growth, 380, 14, 2013 |
| 7 |
Electrical characterization of Schottky contacts to N-polar GaN Downey BP, Meyer DJ, Katzer DS, Storm DF, Binari SC Solid-State Electronics, 86, 17, 2013 |
| 8 |
Comparison of microstructure of N-polar GaN/AlGaN/GaN heterostructures grown on different substrates Zhou L, Storm DF, Katzer DS, Meyer DJ, Smith DJ Journal of Crystal Growth, 357, 25, 2012 |
| 9 |
Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures Deen DA, Storm DF, Katzer DS, Meyer DJ, Binari SC Solid-State Electronics, 54(6), 613, 2010 |
| 10 |
Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs Meyer DJ, Bass R, Katzer DS, Deen DA, Binari SC, Daniels KM, Eddy CR Solid-State Electronics, 54(10), 1098, 2010 |