| 1 |
SiGe channel deposition by batch epitaxy
Reichel C, Schoenekess J, Dietel A, Wasyluk J, Chow YT, Kammler T
Solid-State Electronics, 110, 14, 2015 |
| 2 |
SiGe channels for V-T control of high-k metal gate transistors for 32 nm complementary metal oxide semiconductor technology and beyond
Reichel C, Schoenekess J, Kronholz S, Beernink G, Zeun A, Dietel A, Kammler T
Thin Solid Films, 520(8), 3170, 2012 |
| 3 |
Control of topography and morphology for channel SiGe by in-situ HCl etching for future CMOS technologies with high-K metal gate
Reichel C, Kronholz S, Kammler T, Zeun A, Beernink G
Solid-State Electronics, 60(1), 134, 2011 |
| 4 |
Enhancing epitaxial SixC1-x deposition by adding Ge
Ostermay I, Kammler T, Bartha JW, Kucher P
Thin Solid Films, 518(10), 2834, 2010 |
| 5 |
The kinetics of the reaction of gaseous hydrogen atoms with oxygen on Cu(111) surfaces toward water
Kammler T, Kuppers J
Journal of Physical Chemistry B, 105(35), 8369, 2001 |
| 6 |
Interaction of H atoms with Cu(111) surfaces: Adsorption, absorption, and abstraction
Kammler T, Kuppers J
Journal of Chemical Physics, 111(17), 8115, 1999 |
| 7 |
The role of sticking and reaction probabilities in hot-atom mediated abstraction reactions of D on metal surfaces by gaseous H atoms
Kammler T, Wehner S, Kuppers J
Journal of Chemical Physics, 109(10), 4071, 1998 |
| 8 |
Interaction of Hydrogen-Atoms with Coadsorbed D/CH3I Adlayers on Ni(100) Surfaces - Evidence for Hot Atom Mediated Reaction
Kammler T, Kuppers J
Journal of Chemical Physics, 107(1), 287, 1997 |
