화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Surface migration of group V atoms in GaAsP grown on GaAs channeled substrates by molecular beam epitaxy
Tatsuoka Y, Kamimoto H, Kitada T, Shimomura S, Hiyamizu S
Journal of Vacuum Science & Technology B, 18(3), 1549, 2000
2 In0.18Ga0.82As/GaAs1-yPy quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy
Kamimoto H, Tatsuoka Y, Kitada T, Shimomura S, Hiyamizu S
Journal of Vacuum Science & Technology B, 18(3), 1572, 2000
3 GaAs/GaAs0.8P0.2 quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy
Tatsuoka Y, Kamimoto H, Kitano Y, Kitada T, Shimomura S, Hiyamizu S
Journal of Vacuum Science & Technology B, 17(3), 1155, 1999