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No. | Article |
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1 |
Metal-insulator-semiconductor Schottky barrier structures fabricated using interfacial BN layers grown on GaN and SiC for optoelectronic device applications Starikov D, Badi N, Berishev I, Medelci N, Kameli O, Sayhi M, Zomorrodian V, Bensaoula A Journal of Vacuum Science & Technology A, 17(4), 1235, 1999 |