검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
MOVPE growth of GaN on Si(111) substrates Dadgar A, Poschenrieder M, Blasing J, Contreras O, Bertram F, Riemann T, Reiher A, Kunze M, Daumiller I, Krtschil A, Diez A, Kaluza A, Modlich A, Kamp M, Christen J, Ponce FA, Kohn E, Krost A Journal of Crystal Growth, 248, 556, 2003 |
| 2 |
Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE Haberland K, Kaluza A, Zorn M, Pristovsek M, Hardtdegen H, Weyers M, Zettler JT, Richter W Journal of Crystal Growth, 240(1-2), 87, 2002 |
| 3 |
On the influence of gas inlet configuration with respect to homogeneity in a horizontal single wafer MOVPE reactor Hardtdegen H, Kaluza A, Gauer D, vander Ahe M, Grimm M, Kauffmann P, Kadinski L Journal of Crystal Growth, 223(1-2), 15, 2001 |
| 4 |
Modeling and experimental verification of deposition behavior during AlGaAs growth: a comparison for the carrier gases N-2 and H-2 Dauelsberg M, Hardtdegen H, Kadinski L, Kaluza A, Kaufmann P Journal of Crystal Growth, 223(1-2), 21, 2001 |
| 5 |
On the choice of precursors for the MOVPE-growth of high-quality Al(0.30)Gao(0.70)As/GaAs v-groove quantum wires with large subband spacing Kaluza A, Schwarz A, Gauer D, Hardtdegen H, Nastase N, Luth H, Schapers T, Meertens D, Maciel A, Ryan J, O'Sullivan E Journal of Crystal Growth, 221, 91, 2000 |