검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions Kumar M, Roul B, Rajpalke MK, Bhat TN, Kalghatgi AT, Krupanidhi SB Current Applied Physics, 13(1), 26, 2013 |
| 2 |
Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (111) by plasma-assisted MBE Kumar M, Bhat TN, Roul B, Rajpalke MK, Kalghatgi AT, Krupanidhi SB Materials Research Bulletin, 47(6), 1306, 2012 |
| 3 |
Valence band offset at GaN/beta-Si3N4 and beta-Si3N4/Si(111) heterojunctions formed by plasma-assisted molecular beam epitaxy Kumar M, Roul B, Bhat TN, Rajpalke MK, Kalghatgi AT, Krupanidhi SB Thin Solid Films, 520(15), 4911, 2012 |
| 4 |
The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE Kumar M, Rajpalke MK, Roul B, Bhat TN, Sinha N, Kalghatgi AT, Krupanidhi SB Applied Surface Science, 257(6), 2107, 2011 |
| 5 |
Reduction of oxygen impurity at GaN/beta-Si3N4/Si interface via SiO2 to Ga2O conversion by exposing of Si surface under Ga flux Kumar M, Rajpalke MK, Roul B, Bhat TN, Dash S, Tyagi AK, Kalghatgi AT, Krupanidhi SB Journal of Crystal Growth, 327(1), 272, 2011 |
| 6 |
Improved growth of GaN layers on ultra thin silicon nitride/Si (111) by RF-MBE Kumar M, Roul B, Bhat TN, Rajpalke MK, Misra P, Kukreja LM, Sinha N, Kalghatgi AT, Krupanidhi SB Materials Research Bulletin, 45(11), 1581, 2010 |