| 1 |
Geometry and temperature effects on the threshold voltage characteristics of silicon nanowire MOS transistors
Wong H, Yu QQ, Dong SR, Kakushima K, Iwai H
Solid-State Electronics, 138, 35, 2017 |
| 2 |
XPS study on the effects of thermal annealing on CeO2/La2O3 stacked gate dielectrics
Zhang JQ, Wong H, Kakushima K, Iwai H
Thin Solid Films, 600, 30, 2016 |
| 3 |
La2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode
Zadeh DH, Oomine H, Suzuki Y, Kakushima K, Ahmet P, Nohira H, Kataoka Y, Nishiyama A, Sugii N, Tsutsui K, Natori K, Hattori T, Iwai H
Solid-State Electronics, 82, 29, 2013 |
| 4 |
Comparative study of electrical characteristics in (100) and (110) surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure
Kawanago T, Kakushima K, Ahmet P, Kataoka Y, Nishiyama A, Sugii N, Tsutsui K, Natori K, Hattori T, Iwai H
Solid-State Electronics, 84, 53, 2013 |
| 5 |
Effect of an ultrathin SiO2 interfacial layer on the hysteretic current-voltage characteristics of CeOx-based metal-insulator-metal structures
Miranda E, Kano S, Dou C, Sune J, Kakushima K, Iwai H
Thin Solid Films, 533, 38, 2013 |
| 6 |
Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process
Kawanago T, Suzuki T, Lee Y, Kakushima K, Ahmet P, Tsutsui K, Nishiyama A, Sugii N, Natori K, Hattori T, Iwai H
Solid-State Electronics, 68, 68, 2012 |
| 7 |
Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs
Kawanago T, Lee Y, Kakushima K, Ahmet P, Tsutsui K, Nishiyama A, Sugii N, Natori K, Hattori T, Iwai H
Solid-State Electronics, 74, 2, 2012 |
| 8 |
Effects of corner angle of trapezoidal and triangular channel cross-sections on electrical performance of silicon nanowire field-effect transistors with semi gate-around structure
Sato S, Kakushima K, Ahmet P, Ohmori K, Natori K, Yamada K, Iwai H
Solid-State Electronics, 65-66, 2, 2011 |
| 9 |
Influence of source/drain formation process on resistance and effective mobility for scaled multi-channel MOSFET
Tachi K, Vulliet N, Barraud S, Kakushima K, Iwai H, Cristoloveanu S, Ernst T
Solid-State Electronics, 65-66, 16, 2011 |
| 10 |
XPS Study of the Bonding Properties of Lanthanum Oxide/Silicon Interface with a Trace Amount of Nitrogen Incorporation
Wong H, Iwai H, Kakushima K, Yang BL, Chu PK
Journal of the Electrochemical Society, 157(2), G49, 2010 |
