화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Significance of the interface regarding magnetic properties of manganese nanosilicide in silicon
Ono Y, Miyazaki Y, Yabuuchi S, Kageshima H, Nagase M, Fujiwara A, Ohta E
Thin Solid Films, 519(24), 8505, 2011
2 Two-dimensional emission patterns of secondary electrons from graphene layers formed on SiC(0001)
Hibino H, Kageshima H, Guo FZ, Maeda F, Kotsugi M, Watanabe Y
Applied Surface Science, 254(23), 7596, 2008
3 Enhanced Si and B diffusion in semiconductor-grade SiO2 and the effect of strain on diffusion
Uematsu M, Kageshima H, Fukatsu S, Itoh KM, Shiraishl K, Otani M, Oshiyama A
Thin Solid Films, 508(1-2), 270, 2006
4 A first-principles study of O-2 incorporation and its diffusion in compressively strained high-density silicon oxides
Akiyama T, Kawamoto K, Kageshima H, Uematsu M, Nakamura K, Ito T
Thin Solid Films, 508(1-2), 311, 2006
5 Electrode performance of layered LiNi0.5Ti0.5O2 prepared by ion exchange
Tsuda M, Arai H, Takahashi M, Ohtsuka H, Sakurai Y, Sumitomo K, Kageshima H
Journal of Power Sources, 144(1), 183, 2005
6 Systematic theoretical investigations of adsorption behavior on the GaAs(001)-c(4 x 4) surfaces
Ito T, Tsutsumida K, Nakamura K, Kangawa Y, Shiraishi K, Taguchi A, Kageshima H
Applied Surface Science, 237(1-4), 194, 2004
7 Two-dimensional simulation of pattern-dependent oxidation of silicon nanostructures on silicon-on-insulator substrates
Uematsu M, Kageshima H, Shiraishi K, Nagase M, Horiguchi S, Takahashi Y
Solid-State Electronics, 48(6), 1073, 2004
8 Microscopic mechanism of interfacial reaction during Si oxidation
Akiyama T, Kageshima H
Applied Surface Science, 216(1-4), 270, 2003
9 Systematic theoretical investigations of miscibility in Si1-x-yGexCy thin films
Ito T, Nakamura K, Kangawa Y, Shiraishi K, Taguchi A, Kageshima H
Applied Surface Science, 216(1-4), 458, 2003
10 Selectivity for O-adsorption position on dihydride Si(100) surfaces
Kageshima H, Shiraishi K, Ikeda H, Zaima S, Yasuda Y
Applied Surface Science, 159, 14, 2000