화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Important aspects for the mass production of GaN-based quantum devices grown by MOCVD
Soellner J, Schoen O, Alam A, Schineller B, Kaeppeler J, Heuken M
Thin Solid Films, 515(10), 4362, 2007
2 Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE
Richter E, Hennig C, Weyers M, Habel F, Tsay JD, Liu WY, Bruckner P, Scholz F, Makarov Y, Segal A, Kaeppeler J
Journal of Crystal Growth, 277(1-4), 6, 2005