검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Influence of substrate nitridation on the threading dislocation density of GaN grown on 200 mm Si (111) substrate Kadir A, Srivastava S, Li Z, Lee KEK, Sasangka WA, Gradecak S, Chua SJ, Fitzgerald EA Thin Solid Films, 663, 73, 2018 |
| 2 |
MOVPE growth of semipolar (11(2)over-bar2) Al1-xInxN across the alloy composition range (0 <= x <= 0.55) Hatui N, Frentrup M, Rahman AA, Kadir A, Subramanian S, Kneissl M, Bhattacharya A Journal of Crystal Growth, 411, 106, 2015 |
| 3 |
Growth mode transition and relaxation of thin InGaN layers on GaN (0001) Pristovsek M, Kadir A, Meissner C, Schwaner T, Leyer M, Stellmach J, Kneissl M, Ivaldi F, Kret S Journal of Crystal Growth, 372, 65, 2013 |
| 4 |
Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum-Well Light-Emitting Diodes De S, Layek A, Raja A, Kadir A, Gokhale MR, Bhattacharya A, Dhar S, Chowdhury A Advanced Functional Materials, 21(20), 3828, 2011 |
| 5 |
Influence of buffer layers on the microstructure of MOVPE grown a-plane InN Laskar MR, Ganguli T, Kadir A, Hatui N, Rahman AA, Shah AP, Gokhale MR, Bhattacharya A Journal of Crystal Growth, 315(1), 233, 2011 |
| 6 |
Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy Kadir A, Meissner C, Schwaner T, Pristovsek M, Kneissl M Journal of Crystal Growth, 334(1), 40, 2011 |
| 7 |
Optimization of a-plane (1 1 (2)over-bar 0) InN grown via MOVPE on a-plane GaN buffer layers on r-plane (1 (1)over-bar 0 2) sapphire Laskar MR, Kadir A, Rahman AA, Shah AP, Hatui N, Gokhale MR, Bhattacharya A Journal of Crystal Growth, 312(14), 2033, 2010 |
| 8 |
Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy Lobo N, Kadir A, Laskar MR, Shah AP, Gokhale MR, Rahman AA, Arora BM, Narasimhan KL, Bhattacharya A Journal of Crystal Growth, 310(23), 4747, 2008 |
| 9 |
Microstructure of InN epilayers deposited in a close-coupled showerhead reactor Ganguli T, Kadir A, Gokhale M, Kumar R, Shah AP, Arora BM, Bhattacharya A Journal of Crystal Growth, 310(23), 4942, 2008 |
| 10 |
MOVPE growth and characterization of InN/GaN single and multi-quantum well structures Kadir A, Gokhale MR, Bhattacharya A, Pretorius A, Rosenauer A Journal of Crystal Growth, 311(1), 95, 2008 |