화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Sulfur passivation for the formation of Si-terminated Al2O3/SiGe(001) interfaces
Sardashti K, Hu KT, Tang KC, Park S, Kim H, Madisetti S, McIntyre P, Oktyabrsky S, Siddiqui S, Sahu B, Yoshida N, Kachian J, Kummel A
Applied Surface Science, 366, 455, 2016
2 Passivation of InGaAs(001)-(2 x 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer
Edmonds M, Kent T, Chagarov E, Sardashti K, Droopad R, Chang M, Kachian J, Park JH, Kummel A
Journal of the American Chemical Society, 137(26), 8526, 2015