검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Mg segregation in a (1(1)over-bar01) GaN grown on a 7 degrees off-axis (001) Si substrate by MOVPE Tomita K, Hikosaka T, Kachi T, Sawaki N Journal of Crystal Growth, 311(10), 2883, 2009 |
| 2 |
Si+ ion implantation into GaN at cryogenic temperatures Irokawa Y, Fujishima O, Kachi T, Pearton SJ, Ren F Electrochemical and Solid State Letters, 8(4), G95, 2005 |
| 3 |
High-temperature annealing behavior of p-type doping characteristics in Mg-doped GaN Nakano Y, Fujishima O, Kachi T Journal of the Electrochemical Society, 151(9), G574, 2004 |
| 4 |
n-type doping characteristics of O-implanted AlGaN Nakano Y, Fujishima O, Kachi T, Abe K, Eryu O, Nakashima K, Jimbo T Journal of the Electrochemical Society, 151(12), G801, 2004 |
| 5 |
Inversion behavior in thermally oxidized p-GaN metal-oxide-semiconductor capacitors Nakano Y, Kachi T, Jimbo T Journal of Vacuum Science & Technology B, 21(5), 2220, 2003 |
| 6 |
n-type doping characteristics of O-implanted GaN Nakano Y, Kachi T, Jimbo T Journal of Vacuum Science & Technology B, 21(6), 2602, 2003 |
| 7 |
Evaluation of the coating layer formed on the substrate of C/C composites Kachi T, Kato Y, Ushigome N, Arai N Energy Conversion and Management, 42(15-17), 1963, 2001 |
| 8 |
Electrical properties of 3C-SiC layers grown on silicon substrates with a novel stress relaxation structure Irokawa Y, Kodama M, Kachi T Journal of the Electrochemical Society, 148(12), G680, 2001 |
| 9 |
Effect of C/B sequential implantation on the B acceptors in 4H-SiC Nakano Y, Kachi T, Tadano H, Malhan RK Journal of Crystal Growth, 210(1-3), 283, 2000 |
| 10 |
Orientation control in PZT/Pt/TiN multilayers with various Si and SiO2 underlayers for high performance ferroelectric memories Kushida-Abdelghafar K, Torii K, Mine T, Kachi T, Fujisaki Y Journal of Vacuum Science & Technology B, 18(1), 231, 2000 |