검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Effect of KOH etching on the structure and electrochemical performance of SiOC anodes for lithium-ion batteries Xia KD, Wu ZX, Xuan CJ, Xiao WP, Wang J, Wang DL Electrochimica Acta, 245, 279, 2017 |
| 2 |
Characterization of graphite etched with potassium hydroxide and its application in fast-rechargeable lithium ion batteries Shim JH, Lee S Journal of Power Sources, 324, 475, 2016 |
| 3 |
Characterization of the carrot defect in 4H-SiC epitaxial layers Hassan J, Henry A, McNally PJ, Bergman JP Journal of Crystal Growth, 312(11), 1828, 2010 |
| 4 |
Patterning on single crystalline silicon by laser scanning and alkaline etching Hosono T, Tokura H Applied Surface Science, 255(15), 6857, 2009 |
| 5 |
Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution Kusunoki K, Kamei K, Ueda Y, Naga S, Ito Y, Hasebe M, Ujihara T, Nakajima K Materials Science Forum, 483, 13, 2005 |
| 6 |
A study of 6H-seeded 4H-SIC bulk growth by PVT Tupitsyn EY, Arjunan A, Bondokov RT, Kennedy RM, Sudarshan TS Materials Science Forum, 483, 21, 2005 |
| 7 |
CVD growth and characterization of 4H-SiC epitaxial film on (1120) as-cut substrates Zhang ZH, Gao Y, Arjunan AC, Toupitsyn EY, Sadagopan P, Kennedy R, Sudarshan TS Materials Science Forum, 483, 113, 2005 |
| 8 |
Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability Sakwe SA, Herro ZG, Wellmann PJ Materials Science Forum, 483, 283, 2005 |
| 9 |
Structure of in-grown stacking faults in the 4H-SiC epitaxial layers Izumi S, Tsuchida H, Tawara T, Kamata I, Izumi K Materials Science Forum, 483, 323, 2005 |
| 10 |
Epitaxial growth of (1120) 4H-SiC using substrate grown in the [1120] direction Kojima K, Ohno T, Senzaki J, Fukuda K, Fujimoto T, Katsuno M, Ohtani N, Nishino J, Masahara K, Ishida Y, Takahashi T, Suzuki T, Tanaka T, Yoshida S, Arai K Materials Science Forum, 389-3, 195, 2002 |