1 |
Fermi-level depinning in metal/Ge interface using oxygen plasma treatment Janardhanam V, Yun HJ, Jyothi I, Yuk SH, Lee SN, Won J, Choi CJ Applied Surface Science, 463, 91, 2019 |
2 |
Rectifying and breakdown voltage enhancement of Au/n-GaN Schottky diode with Al-doped ZnO films and its structural characterization Janardhanam V, Jyothi I, Lee SN, Reddy VR, Choi CJ Thin Solid Films, 676, 125, 2019 |
3 |
Electrical properties of a Cu-germanide Schottky contact to n-type Ge depending on its microstructural evolution driven by rapid thermal annealing Janardhanam V, Jyothi I, Lee JH, Yun HJ, Won J, Lee YB, Lee SN, Choi CJ Thin Solid Films, 632, 23, 2017 |
4 |
Temperature-dependent current-voltage characteristics of Se Schottky contact to n-type Ge Janardhanam V, Jyothi I, Ahn KS, Choi CJ Thin Solid Films, 546, 63, 2013 |
5 |
Electrical, structural and surface morphological properties of thermally stable low-resistance W/Ti/Au multilayer ohmic contacts to n-type GaN Jyothi I, Reddy VR Applied Surface Science, 257(1), 67, 2010 |