화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Synchrotron X-ray diffraction topography study of bonding-induced strain in silicon-on-insulator wafers
Lankinen A, Tuomi TO, Kostamo P, Jussila H, Sintonen S, Lipsanen H, Tilli M, Makinen J, Danilewsky AN
Thin Solid Films, 603, 435, 2016
2 Properties of atomic-layer-deposited ultra-thin AIN films on GaAs surfaces
Mattila P, Bosund M, Jussila H, Aierken A, Riikonen J, Huhtio T, Lipsanen H, Sopanen M
Applied Surface Science, 314, 570, 2014
3 Defect structure of a free standing GaN wafer grown by the ammonothermal method
Sintonen S, Suihkonen S, Jussila H, Lipsanen H, Tuomi TO, Letts E, Hoff S, Hashimoto T
Journal of Crystal Growth, 406, 72, 2014
4 Evaluation of critical thickness of GaP0.98N0.02 layer on GaP substrate by synchrotron X-ray diffraction topography
Jussila H, Nagarajan S, Sintonen S, Suihkonen S, Lankinen A, Huhtio T, Paulmann C, Lipsanen H, Tuomi TO, Sopanen M
Thin Solid Films, 534, 680, 2013