검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Enhancing the surface properties and functionalization of polymethyl methacrylate with atomic layer-deposited titanium(IV) oxide Shahmohammadi M, Pensa E, Bhatia H, Yang B, Jursich G, Takoudis CG Journal of Materials Science, 55(36), 17151, 2020 |
| 2 |
Surface and subsurface film growth of titanium dioxide on polydimethylsiloxane by atomic layer deposition Astaneh SH, Jursich G, Sukotjo C, Takoudis CG Applied Surface Science, 493, 779, 2019 |
| 3 |
On the initial growth of atomic layer deposited TiO2 films on silicon and copper surfaces Tao Q, Overhage K, Jursich G, Takoudis C Thin Solid Films, 520(22), 6752, 2012 |
| 4 |
Atomic Layer Deposition of HfO2, TiO2, and HfxTi1-xO2 Using Metal (Diethylamino) Precursors and H2O Tao QA, Kueltzo A, Singh M, Jursich G, Takoudis CG Journal of the Electrochemical Society, 158(2), G27, 2011 |
| 5 |
Composition-Structure-Dielectric Property of Yttrium-Doped Hafnium Oxide Films Deposited by Atomic Layer Deposition Tao Q, Jursich G, Majumder P, Singh M, Walkosz W, Gu P, Klie R, Takoudis C Electrochemical and Solid State Letters, 12(9), G50, 2009 |
| 6 |
Atomic layer deposition of Y2O3 films on silicon using tris(ethylcyclopentadienyl) yttrium precursor and water vapor Majumder P, Jursich G, Kueltzo A, Takoudis C Journal of the Electrochemical Society, 155(8), G152, 2008 |
| 7 |
Nitridation and oxynitridation of Si to control interfacial reaction with HfO2 Katarnreddy R, Inman R, Jursich G, Soulet A, Takoudis C Thin Solid Films, 516(23), 8498, 2008 |
| 8 |
ALD and characterization of aluminum oxide deposited on Si(100) using tris(diethylamino) aluminum and water vapor (vol 153, pg C701, 2006) Katamreddy R, Inman R, Jursich G, Soulet A, Takoudis C Journal of the Electrochemical Society, 154(4), S5, 2007 |
| 9 |
Atomic layer deposition of lanthana thin films using high-purity lanthanum amino precursors Inman R, Schuetz SA, Silvernail CM, Balaz S, Dowben PA, Jursich G, McAndrew J, Belot JA Materials Chemistry and Physics, 104(2-3), 220, 2007 |
| 10 |
Post deposition annealing of aluminum oxide deposited by atomic layer deposition using tris(diethylamino)aluminum and water vapor on Si(100) Katamreddy R, Inman R, Jursich G, Soulet A, Nicholls A, Takoudis C Thin Solid Films, 515(17), 6931, 2007 |