검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
A simple multistep etched termination technique for 4H-SiC GTO thyristors Li ZG, Zhou K, Zhang L, Xu XL, Li LH, Li JT, Dai G Solid-State Electronics, 151, 1, 2019 |
| 2 |
Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination He YJ, Lv HL, Tang XY, Song QW, Zhang YM, Han C, Zhang YM, Zhang YM Solid-State Electronics, 129, 175, 2017 |
| 3 |
Accurate analytical modelling of cosmic ray induced failure rates of power semiconductor devices Bauer FD Solid-State Electronics, 53(6), 584, 2009 |
| 4 |
Effective edge termination design in SiCVJFET Bhatnagar P, Horsfall AB, Wright NG, O'Neill AG, Vassilevski KV, Johnson CM Materials Science Forum, 483, 877, 2005 |
| 5 |
Design and optimization of junction termination extension (JTE) for 4H-SiC high voltage Schottky diodes Mahajan A, Skromme BJ Solid-State Electronics, 49(6), 945, 2005 |
| 6 |
High power 4H-SiC PiN diodes with minimal forward voltage drift Das MK, Sumakeris JJ, Paisley MJ, Powell A Materials Science Forum, 457-460, 1105, 2004 |
| 7 |
Edge termination technique for SiC power devices Kim HW, Bahng W, Song GH, Kim SC, Kim NK, Kim ED Materials Science Forum, 457-460, 1241, 2004 |
| 8 |
Development of 10 kV 4H-SiC power DMOSFETs Ryu SH, Agarwal A, Krishnaswami S, Richmond J, Palmour J Materials Science Forum, 457-460, 1385, 2004 |
| 9 |
Performance of 4H-SiC Schottky diodes with Al-doped p-guard-ring junction termination at reverse bias Felsl HP, Wachutka G Materials Science Forum, 389-3, 1153, 2002 |
| 10 |
Design of single and multiple zone junction termination extension structures for SiC power devices Sheridan DC, Niu GF, Cressler JD Solid-State Electronics, 45(9), 1659, 2001 |