화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Low temperature junction magnetoresistance properties of Co0.65Zn0.35Fe2O4/SiO2/p-Si magnetic diode like heterostructure for spin-electronics
Panda J, Nath TK
Thin Solid Films, 601, 111, 2016
2 Temperature dependent spin injection properties of the Ni nanodots embedded metallic TiN matrix and p-Si heterojunction
Panda J, Chattopadhyay S, Nath TK
Thin Solid Films, 546, 211, 2013
3 Electrical and magnetoelectronic properties of La0.7Sr0.3MnO3/SiO2/p-Si heterostructure for spintronics application
Chattopadhyay S, Nath TK
Current Applied Physics, 11(5), 1153, 2011
4 Plasma oxidation of the insulation layer in the magnetic tunneling junctions
Kyung H, Yoo CS, Yoon CS, Kim CK
Materials Chemistry and Physics, 77(2), 583, 2003
5 Plasma oxidation and magnetoresistance in tunnel junction device
Jeon DM, Park JW, Kim YS, Yoon DH, Suh SJ
Thin Solid Films, 435(1-2), 135, 2003