검색결과 : 5건
No. | Article |
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1 |
Low temperature junction magnetoresistance properties of Co0.65Zn0.35Fe2O4/SiO2/p-Si magnetic diode like heterostructure for spin-electronics Panda J, Nath TK Thin Solid Films, 601, 111, 2016 |
2 |
Temperature dependent spin injection properties of the Ni nanodots embedded metallic TiN matrix and p-Si heterojunction Panda J, Chattopadhyay S, Nath TK Thin Solid Films, 546, 211, 2013 |
3 |
Electrical and magnetoelectronic properties of La0.7Sr0.3MnO3/SiO2/p-Si heterostructure for spintronics application Chattopadhyay S, Nath TK Current Applied Physics, 11(5), 1153, 2011 |
4 |
Plasma oxidation of the insulation layer in the magnetic tunneling junctions Kyung H, Yoo CS, Yoon CS, Kim CK Materials Chemistry and Physics, 77(2), 583, 2003 |
5 |
Plasma oxidation and magnetoresistance in tunnel junction device Jeon DM, Park JW, Kim YS, Yoon DH, Suh SJ Thin Solid Films, 435(1-2), 135, 2003 |