화학공학소재연구정보센터
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No. Article
1 Cubic SiC formation on the C-face of 6H-SiC (0001) substrates
Vasiliauskas R, Juillaguet S, Syvajarvi M, Yakimova R
Journal of Crystal Growth, 348(1), 91, 2012
2 Room temperature luminescence properties of fluorescent SiC as white light emitting diode medium
Sun JW, Jokubavicius V, Liljedahl R, Yakimova R, Juillaguet S, Camassel J, Kamiyama S, Syvajarvi M
Thin Solid Films, 522, 33, 2012
3 Effect of initial substrate conditions on growth of cubic silicon carbide
Vasiliauskas R, Marinova M, Syvajarvi M, Liljedahl R, Zoulis G, Lorenzzi J, Ferro G, Juillaguet S, Camassel J, Polychroniadis EK, Yakimova R
Journal of Crystal Growth, 324(1), 7, 2011
4 Prospects for 3C-SiC bulk crystal growth
Chaussende D, Mercier F, Boulle A, Conchon F, Soueidan M, Ferro G, Mantzari A, Andreadou A, Polychroniadis EK, Balloud C, Juillaguet S, Camassel J, Pons M
Journal of Crystal Growth, 310(5), 976, 2008
5 Nitrogen doping of 3C-SiC thin films grown by CVD in a resistively heated horizontal hot-wall reactor
Zielinski M, Portail M, Chassagne T, Juillaguet S, Peyre H
Journal of Crystal Growth, 310(13), 3174, 2008
6 Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique
Al Asmar R, Juillaguet S, Ramonda M, Giani A, Combette P, Khoury A, Foucaran A
Journal of Crystal Growth, 275(3-4), 512, 2005
7 Evaluation of p-type doping for (1,1,-2,0) epitaxial layers grown on alpha-cut (1,1,-2,0) 4H-SiC substrates
Blanc C, Zielinski M, Souliere V, Sartel C, Juillaguet S, Contreras S, Camassel J, Monteil Y
Materials Science Forum, 483, 117, 2005
8 Comparative evaluation of free-standing 3C-SiC crystals
Polychroniadis E, Balloud C, Juillaguet S, Ferro G, Monteil Y, Camassel F, Stoemenos J
Materials Science Forum, 483, 229, 2005
9 Intensity ratio of the doublet signature of excitons bound to 3C-SiC stacking faults in a 4H-SiC matrix
Camassel J, Juillaguet S
Materials Science Forum, 483, 331, 2005
10 Specific aspects of type II heteropolytype stacking faults in SiC
Juillaguet S, Camassel J
Materials Science Forum, 483, 335, 2005