화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Analysis and modeling of wafer-level process variability in 28 nm FD-SOI using split C-V measurements
Pradeep K, Poiroux T, Scheer P, Juge A, Gouget G, Ghibaudo G
Solid-State Electronics, 145, 19, 2018
2 Obtaining DC and AC isothermal electrical characteristics for RF MOSFET
Sahoo AK, Fregonese S, Scheer P, Celi D, Juge A, Zimmer T
Solid-State Electronics, 106, 78, 2015
3 Modeling of MOSFET parasitic capacitances, and their impact on circuit performance
Mueller J, Thoma R, Demircan E, Bernicot C, Juge A
Solid-State Electronics, 51(11-12), 1485, 2007
4 DC and AC MOS transistor modelling in presence of high gate leakage and experimental validation
Gilibert F, Rideau D, Bernardini S, Scheer P, Minondo M, Roy D, Gouget G, Juge A
Solid-State Electronics, 48(4), 597, 2004