화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating
Choi S, Kim HJ, Lochner Z, Kim J, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JYY, Ponce FA, Ryou JH
Journal of Crystal Growth, 388, 137, 2014
2 Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions
Kim J, Lochner Z, Ji MH, Choi S, Kim HJ, Kim JS, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JYY, Ponce FA, Ryou JH
Journal of Crystal Growth, 388, 143, 2014
3 Comparative study of In GaAs integration on bulk Ge and virtual Ge/Si(100) substrates for low-cost photovoltaic applications
Beeler R, Mathews J, Weng CE, Tolle J, Roucka R, Chizmeshya AVG, Juday R, Bagchi S, Menendez J, Kouvetakis J
Solar Energy Materials and Solar Cells, 94(12), 2362, 2010