검색결과 : 2건
No. | Article |
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1 |
Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer Nohira H, Shiraishi T, Takahashi K, Hattori T, Kashiwagi I, Ohshima C, Ohmi S, Iwai H, Joumori S, Nakajima K, Suzuki M, Kimura K Applied Surface Science, 234(1-4), 493, 2004 |
2 |
Characterization of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy Nakajima K, Joumori S, Suzuki M, Kimura K, Osipowicz T, Tok KL, Zheng JZ, See A, Zhang BC Applied Surface Science, 237(1-4), 416, 2004 |