검색결과 : 6건
No. | Article |
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1 |
Photo-selective chemical etching of InAs and GaSb to manufacture microscopic mirrors Huerta-Cuellar G, Guel-Sandoval S, De Anda F, Mendez VH, Torres-Loredo B, Garnache A, Joullie A Journal of Applied Electrochemistry, 38(2), 269, 2008 |
2 |
Interface analysis of InAs/GaSb superlattice grown by MBE Satpati B, Rodriguez JB, Trampert A, Tournie E, Joullie A, Christol P Journal of Crystal Growth, 301, 889, 2007 |
3 |
MBE growth and characterization of type-II InAs/GaSb superlattices for mid-infrared detection Rodriguez JB, Christol P, Cerutti L, Chevrier F, Joullie A Journal of Crystal Growth, 274(1-2), 6, 2005 |
4 |
Failure analysis of a cascade laser structure by electrostatic force microscopy Azize M, Girard P, Teissier R, Baranov AN, Joullie A Journal of Vacuum Science & Technology B, 21(5), 2151, 2003 |
5 |
MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers Wilk A, Genty F, Fraisse B, Boissier G, Grech P, El Gazouli M, Christol P, Oswald J, Simecek T, Hulicius E, Joullie A Journal of Crystal Growth, 223(3), 341, 2001 |
6 |
MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m Wilk A, Fraisse B, Christol P, Boissier G, Grech P, El Gazouli M, Rouillard Y, Baranov AN, Joullie A Journal of Crystal Growth, 227, 586, 2001 |