검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Wet oxidation for detecting surface defect pits of AlGaAs related semiconductors Peng CS, Konttinen J, Jouhti T, Liu HF, Pessa M Journal of Crystal Growth, 274(1-2), 138, 2005 |
| 2 |
Influence of arsenic pressure on photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy Pavelescu EM, Hakkarainen T, Dhaka VDS, Tkachenko NV, Jouhti T, Lemmetyinen H, Pessa M Journal of Crystal Growth, 281(2-4), 249, 2005 |
| 3 |
In situ annealing effect on the structural properties of near-surface GaInNAs/GaAs quantum wells Liu HF, Karrinne S, Peng CS, Jouhti T, Konttinen J, Pessa M Journal of Crystal Growth, 263(1-4), 171, 2004 |
| 4 |
GaInNAs/GaAs Bragg-mirror-based structures for novel 1.3 mu m device applications Calvez S, Hopkins JM, Smith SA, Clark AH, Macaluso R, Sun HD, Dawson MD, Jouhti T, Pessa M, Gundogdu K, Hall KC, Boggess TF Journal of Crystal Growth, 268(3-4), 457, 2004 |
| 5 |
A study and control of lattice sites of N and In/Ga interdiffusion in dilute nitride quantum wells Peng CS, Li W, Jouhti T, Pavelescu EM, Pessa M Journal of Crystal Growth, 251(1-4), 378, 2003 |
| 6 |
Carrier profiling and crystal quality evaluation of thin AlxGa1-xAs (0.22 < x < 0.86) films by electrochemical capacitance/voltage technique Fedorenko Y, Jouhti T, Konttinen J, Likonen J, Pessa M Journal of the Electrochemical Society, 150(7), G380, 2003 |
| 7 |
Diffusion at the interfaces of InGaNAs/GaAs quantum wells Peng CS, Pavelescu EM, Jouhti T, Konttinen J, Pessa M Solid-State Electronics, 47(3), 431, 2003 |
| 8 |
Enhanced optical and structural properties of strain-compensated 1.3-mu m GaInNAs/GaNAs/GaAs quantum-well structures by insertion of strain-mediating layers Pavelescu EM, Peng CS, Jouhti T, Konttinen J, Dumitrescu M, Li W, Pessa M Solid-State Electronics, 47(3), 507, 2003 |
| 9 |
A new method to suppress the In diffusion of InGaNAS/GaAs quantum wells grown by molecular beam epitaxy Peng CS, Jouhti T, Pavelescu EM, Konttinen J, Pessa M Thin Solid Films, 428(1-2), 176, 2003 |
| 10 |
Doping impurity distribution and crystal quality evaluation of AlGaAs : Si films (0.22 < x < 0.86) by electrochemical etching technique Fedorenko Y, Jouhti T, Konttinen J, Likonen J, Pessa M Thin Solid Films, 428(1-2), 181, 2003 |