검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Local non invasive study of SiC diodes with abnormal electrical behavior Leon J, Perpina X, Vellvehi M, Jorda X, Godignon P Solid-State Electronics, 113, 35, 2015 |
| 2 |
Analysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities Perpina X, Jorda X, Vellvehi M, Vobecky J, Mestres N Journal of the Electrochemical Society, 157(7), H711, 2010 |
| 3 |
Temperature impact on high-current 1.2kV SiC Schottky rectifiers Jorda X, Tournier D, Rebollo J, Millan J, Godignon P Materials Science Forum, 483, 929, 2005 |
| 4 |
Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal Perez R, Mestres N, Tournier D, Jorda X, Vellvehi M, Godignon P Materials Science Forum, 483, 945, 2005 |
| 5 |
A highly effective edge termination design for SiC planar high power devices Perez R, Mestres N, Blanque S, Tournier D, Jorda X, Godignon P, Nipoti R Materials Science Forum, 457-460, 1253, 2004 |
| 6 |
Highly-doped implanted pn junction for SiC Zener diode fabrication Godignon P, Jorda X, Nipoti R, Cardinali G, Mestres N Materials Science Forum, 389-3, 1317, 2002 |
| 7 |
Effect of boron implantation on 6H-SiC N-MOSFET interface properties Godignon P, Jorda X, Vellvehi M, Berberich S, Montserrat J, Ottaviani L Materials Science Forum, 338-3, 1303, 2000 |