검색결과 : 31건
| No. | Article |
|---|---|
| 1 |
Cyclobutanone Analogues of beta-Lactams Revisited: Insights into Conformational Requirements for Inhibition of Serine- and Metallo-beta-Lactamases Johnson JW, Gretes M, Goodfellow VJ, Marrone L, Heynen ML, Strynadka NCJ, Dmitrienko GI Journal of the American Chemical Society, 132(8), 2558, 2010 |
| 2 |
Chloride ion detection by InN gated AlGaN/GaN high electron mobility transistors Chu BH, Lin HW, Gwo S, Wang YL, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicuni KJ, Ren F Journal of Vacuum Science & Technology B, 28(1), L5, 2010 |
| 3 |
Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors Wang YL, Chang CY, Lim W, Pearton SJ, Norton DP, Chu BH, Lo CF, Ren F, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ Journal of Vacuum Science & Technology B, 28(2), 376, 2010 |
| 4 |
Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si Chen KH, Ren F, Pais A, Xie HK, Gila BP, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ Journal of Vacuum Science & Technology B, 27(5), 2166, 2009 |
| 5 |
Exhaled-breath detection using AlGaN/GaN high electron mobility transistors integrated with a Peltier element Kang BS, Wang HT, Ren F, Gila BP, Abernathy CR, Pearton SJ, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ Electrochemical and Solid State Letters, 11(3), J19, 2008 |
| 6 |
Integration of selective area anodized AgCl thin film with AlGaN/GaN HEMTs for chloride ion detection Hung SC, Wang YL, Hicks B, Pearton SJ, Ren F, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chi GC Electrochemical and Solid State Letters, 11(9), H241, 2008 |
| 7 |
Synthesis and characterization of core cross-linked star clusters by conventional free-radical polymerization Goh TK, Sulistio AP, Blencowe A, Johnson JW, Qiao GG Macromolecules, 40(22), 7819, 2007 |
| 8 |
Comparison of interface state density characterization methods for SiO2/4H-SiC MOS diodes LaRoche JR, Kim J, Johnson JW, Luo B, Kang BS, Mehandru R, Irokawa Y, Pearton SJ, Chung G, Ren F Electrochemical and Solid State Letters, 7(2), G21, 2004 |
| 9 |
Review fundamentals when retrofitting for ULSD - The success of revamps is driven by accurate front-end process design. Performing feasibility studies controls cost estimates and ensures meeting goals for upgrades Palmer RE, Johnson JW Hydrocarbon Processing, 83(2), 39, 2004 |
| 10 |
Electrical characterization of GaN metal oxide semiconductor diode using Sc2O3 as the gate oxide Mehandru R, Gila BP, Kim J, Johnson JW, Lee KP, Luo B, Onstine AH, Abernathy CR, Pearton SJ, Ren F Electrochemical and Solid State Letters, 5(7), G51, 2002 |