검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells Nakano S, Gao B, Jiptner K, Harada H, Miyamura Y, Sekiguchi T, Fukuzawa M, Kakimoto K Journal of Crystal Growth, 474, 130, 2017 |
| 2 |
Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon Gao B, Jiptner K, Nakano S, Harada H, Miyamura Y, Sekiguchi T, Kakimoto K Journal of Crystal Growth, 411, 49, 2015 |
| 3 |
Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization Miyamura Y, Harada H, Jiptner K, Chen J, Prakash RR, Nakano S, Gao B, Kakimoto K, Sekiguchi T Journal of Crystal Growth, 401, 133, 2014 |
| 4 |
Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal Prakash RR, Sekiguchi T, Jiptner K, Miyamura Y, Chen J, Harada H, Kakimoto K Journal of Crystal Growth, 401, 717, 2014 |
| 5 |
Thermal stress induced dislocation distribution in directional solidification of Si for PV application Jiptner K, Gao B, Harada H, Miyamura Y, Fukuzawa M, Kakimoto K, Sekiguchi T Journal of Crystal Growth, 408, 19, 2014 |
| 6 |
Butterfly-shaped distribution of SiNx precipitates in multi-crystalline Si for solar cells Li JY, Prakash RR, Jiptner K, Chen J, Miyamura Y, Harada H, Kakimoto K, Ogura A, Sekiguchi T Journal of Crystal Growth, 377, 37, 2013 |
| 7 |
Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique Baba M, Toh K, Toko K, Saito N, Yoshizawa N, Jiptner K, Sekiguchi T, Hara KO, Usami N, Suemasu T Journal of Crystal Growth, 348(1), 75, 2012 |