화학공학소재연구정보센터
검색결과 : 13건
No. Article
1 Encapsulation of a Core-Shell Porous Fe3O4@Carbon Material with Reduced Graphene Oxide for Li+ Battery Anodes with Long Cyclability
Wu QC, Yu R, Zhou ZH, Liu HW, Jiang RL
Langmuir, 37(2), 785, 2021
2 Combustion mechanism of four components separated from asphalt binder
Shi HQ, Xu T, Jiang RL
Fuel, 192, 18, 2017
3 Oscillatory electro-oxidation of thiosulfate on gold
Bi WY, He YX, Cabral MF, Varela H, Yang JP, Jiang RL, Gao QY
Electrochimica Acta, 133, 308, 2014
4 Constitutive stabilization of beta-catenin in the dental mesenchyme leads to excessive dentin and cementum formation
Kim TH, Lee JY, Baek JA, Lee JC, Yang X, Taketo MM, Jiang RL, Cho ES
Biochemical and Biophysical Research Communications, 412(4), 549, 2011
5 The template effects on AlN/Al0.3Ga0.7N distributed Bragg reflectors grown by MOCVD
Liu B, Zhang R, Xie ZL, Ji XL, Jiang RL, Xiu XQ, Li L, Liu CX, Yu HQ, Han P, Gu SL, Shi Y, Zheng YD
Journal of Crystal Growth, 298, 357, 2007
6 High reflectivity AlGaN/AlN DBR mirrors grown by MOCVD
Xie ZL, Zhang R, Liu B, Ji XL, Li L, Liu CX, Jiang RL, Gong HM, Zhao H, Han P, Shi Y, Zheng YD
Journal of Crystal Growth, 298, 691, 2007
7 Function of quantum-confinement effect in the AlGaN/AlN/GaN heterostructure with an AlN interfacial layer
Kong YC, Chu RM, Zheng YD, Zhou CH, Gu SL, Zhang R, Han P, Shi Y, Jiang RL
Journal of Vacuum Science & Technology B, 25(3), 873, 2007
8 A novel InxGa1-xN/InN heterostructure field-effect transistor with extremely high two-dimensional electron-gas sheet density
Kong YC, Zheng YD, Zhou CH, Deng YZ, Shen B, Gu SL, Zhang R, Han P, Jiang RL, Shi Y
Solid-State Electronics, 49(2), 199, 2005
9 Effects of contact barriers on Si-substrated GaN photodetectors
Zhao ZM, Jiang RL, Chen P, Xi DJ, Shen B, Zhang R, Zheng YD
Journal of Vacuum Science & Technology B, 19(1), 286, 2001
10 Normal-incidence SiGe/Si photodetectors with different buffer layers
Jiang RL, Lo ZY, Chen WM, Zang L, Zhu SM, Liu XB, Cheng XM, Chen ZZ, Chen P, Han P, Zheng YD
Journal of Vacuum Science & Technology B, 18(3), 1251, 2000