검색결과 : 33건
| No. | Article |
|---|---|
| 1 |
Patch repair of deep wounds by mobilized fascia Correa-Gallegos D, Jiang DS, Christ S, Ramesh P, Ye HF, Wannemacher J, Gopal SK, Yu Q, Aichler M, Walch A, Mirastschijski U, Volz T, Rinkevich Y Nature, 576(7786), 287, 2019 |
| 2 |
Energy band tilt in ultra-thin InGaN film affected by the surface adsorption and desorption Liu W, Yang J, Zhao DG, Jiang DS, Zhu JJ, Chen P, Liu ZS, Liang F, Liu ST, Xing Y, Zhang LQ, Wang WJ, Li M, Zhang YT, Du GT Applied Surface Science, 456, 487, 2018 |
| 3 |
Photoelectrochemical monitoring of ciprofloxacin based on metallic Bi self-doping BiOBr nanocomposites Yan PC, Xu L, Jiang DS, Li HN, Xia JX, Zhang Q, Hua MQ, Li HM Electrochimica Acta, 259, 873, 2018 |
| 4 |
miR-1236-3p suppresses the migration and invasion by targeting KLF8 in lung adenocarcinoma A549 cells Bian TT, Jiang DS, Liu J, Yuan XP, Feng J, Li Q, Zhang Q, Li XL, Liu YF, Zhang JG Biochemical and Biophysical Research Communications, 492(3), 461, 2017 |
| 5 |
Improvement of Ohmic contact to p-GaN by controlling the residual carbon concentration in p(++) -GaN layer Liang F, Zhao DG, Jiang DS, Liu ZS, Zhu JJ, Chen P, Yang J, Liu W, Li X, Liu ST, Xing Y, Zhang LQ, Yang H, Long H, Li M Journal of Crystal Growth, 467, 1, 2017 |
| 6 |
Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC Liang F, Chen P, Zhao DG, Jiang DS, Liu ZS, Zhu JJ, Yang J, Liu W, He XG, Li XJ, Li X, Liu ST, Yang H, Zhang LQ, Liu JP, Zhang YT, Du GT Chemical Physics Letters, 651, 76, 2016 |
| 7 |
Fluorescence spectra of Na5Lu9F32 single crystals co-doped with Ho3+/Tm3+ grown by Bridgman method Feng ZG, Xia HP, Wang C, Zhang ZX, Jiang DS, Zhang J, He SN, Tang QY, Sheng QG, Gu XM, Zhang YP, Chen BJ, Jiang HC Chemical Physics Letters, 652, 68, 2016 |
| 8 |
Energy transfer and 2.0 mu m emission in Tm3+/Ho3+ co-doped alpha-NaYF4 single crystals Feng ZG, Yang S, Xia HP, Wang C, Jiang DS, Zhang J, Gu XM, Zhang YP, Chen BJ, Jiang HC Materials Research Bulletin, 76, 279, 2016 |
| 9 |
Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition He XG, Zhao DG, Jiang DS, Liu ZS, Chen P, Le LC, Yang J, Li XJ, Zhang SM, Zhu JJ, Wang H, Yang H Thin Solid Films, 564, 135, 2014 |
| 10 |
Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) Zhu JJ, Fan YM, Zhang H, Lu GJ, Wang H, Zhao DG, Jiang DS, Liu ZS, Zhang SM, Chen GF, Zhang BS, Yang H Journal of Crystal Growth, 348(1), 25, 2012 |