화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Dramatic improvements in AlGaN/GaN HEMT device isolation characteristics after UV-ozone pretreatment
Moser N, Fitch RC, Crespo A, Gillespie JK, Jessen GH, Via GD, Luo B, Ren F, Gila BP, Abernathy CR, Pearton SJ
Journal of the Electrochemical Society, 151(12), G915, 2004
2 Micro-Auger electron spectroscopy studies of chemical and electronic effects at GaN-sapphire interfaces
Sun XL, Bradley ST, Jessen GH, Look DC, Molnar RJ, Brillson LJ
Journal of Vacuum Science & Technology A, 22(6), 2284, 2004
3 Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation
Luo B, Mehandru R, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch RC, Moser N, Gillespie JK, Jessen GH, Jenkins TJ, Yannuzi MJ, Via GD, Crespo A
Solid-State Electronics, 47(10), 1781, 2003
4 Chemically dependent traps and polytypes at Pt/Ti contacts to 4H and 6H-SiC
Tumakha S, Brillson LJ, Jessen GH, Okojie RS, Lukco D, Zhang M, Pirouz P
Journal of Vacuum Science & Technology B, 20(2), 554, 2002
5 Ohmic contact characterization of AlGaN/GaN device layers with spatially localized LEEN spectroscopy
Jessen GH, White BD, Bradley ST, Smith PE, Brillson LJ, Van Nostrand JE, Fitch R, Via GD, Gillespie JK, Dettmer RW, Sewell JS
Solid-State Electronics, 46(9), 1427, 2002
6 Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces
Brillson LJ, Young AP, Jessen GH, Levin TM, Bradley ST, Goss SH, Bae J, Ponce FA, Murphy MJ, Schaff WJ, Eastman LF
Applied Surface Science, 175, 442, 2001
7 Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells
Levin TM, Jessen GH, Ponce FA, Brillson LJ
Journal of Vacuum Science & Technology B, 17(6), 2545, 1999
8 Cathodoluminescence measurements of suboxide band-tail and Si dangling bond states at ultrathin Si-SiO2 interfaces
Young AP, Schafer J, Jessen GH, Bandhu R, Brillson LJ, Lucovsky G, Niimi H
Journal of Vacuum Science & Technology B, 16(4), 2177, 1998